| 摘要 |
PURPOSE: A method for fabricating a dynamic random access memory(DRAM) cell is provided to prevent a void generated between dog bones of a bitline from being exposed by forming a stacked structure of an interlayer oxide layer, a polycrystalline silicon layer and a nitride layer after the bitline is formed and by forming a contact hole for a plug through an etch process. CONSTITUTION: The first interlayer oxide layer, the first polycrystalline silicon layer(51) and the first nitride layer are sequentially formed on an underlying structure including the bitlines(43). The first nitride layer, the first polycrystalline silicon layer and the first interlayer oxide layer are etched to form the contact hole for the plug(57) through a photolithography process using a mask for the plug. The second nitride layer spacer is formed on the inner wall of the contact hole for the plug. A plug is formed as a filling layer of the contact hole for the plug. The second interlayer oxide layer including a storage node contact hole(61) is formed on the resultant structure including the plug. The third nitride layer spacer is formed on the inner wall of the storage node contact hole.
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