METHOD FOR MANUFACTURING FLASH MEMORY

摘要

PURPOSE: A method for manufacturing a flash memory is provided to be capable of preventing residues from being generated at a cell/peripheral boundary region by filling gate forming material into an etching damage groove generated at an isolation layer of the cell/peripheral boundary region when carrying out a gate etching process. CONSTITUTION: An etching damage groove is formed at an isolation layer(42) of a cell/peripheral boundary region while carrying out an oxide layer removing process. A top polysilicon layer(51) and a metal based material layer(52) are sequentially formed on the entire surface of the resultant structure. A gate is formed at a cell region and a peripheral region by carrying out a gate etching process and a self-alignment etching process using a gate mask layer(600). At this time, a dummy gate is formed along the etching damage groove of the cell/peripheral boundary region.