| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to be capable of preventing boron or hot carrier from being penetrated into a gate oxide layer and restraining a salicide layer from being formed to the lower portion of an insulating spacer by using a nitride based insulating layer and a gate made of a metal layer. CONSTITUTION: After sequentially depositing a nitride oxide layer and a polysilicon layer on a semiconductor substrate, a sacrificial gate is formed by patterning the polysilicon layer and the nitride oxide layer. A nitride based insulating layer(26) is deposited on the entire surface of the resultant structure. After depositing an oxide layer on the resultant structure, an insulating spacer(28) is formed by etching the oxide layer and the nitride based insulating layer. After forming a source/drain region(27) in the semiconductor substrate, a salicide layer(29) is formed on the source/drain region. After forming an insulating layer(30) on the resultant structure, the sacrificial gate is removed. A gate made of a metal layer(33) is formed at the sacrificial gate removed region.
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