| 摘要 |
PURPOSE: A method for forming a dual damascene pattern of a semiconductor device is provided to be capable of improving etching profile and processing margin by compensating etching damage when forming a trench. CONSTITUTION: A metal diffusion barrier layer(34), the first insulating layer(35), an etch stop layer(36), the second insulating layer(37) and the first anti-reflective layer are sequentially formed on a semiconductor substrate(31) having metal lines(33). A via hole(40a) is formed to expose the metal diffusion barrier layer(34). After removing the first anti-reflective layer, the second anti-reflective layer is formed on the second insulating layer and in the via hole. After partially removing the second anti-reflective layer, the third insulating layer is formed on the exposed second and first insulating layer. A trench(40b) is then formed by selectively etching the second insulating layer. After entirely removing the second anti-reflective layer, the metal diffusion barrier layer is removed to expose the metal lines(33).
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