| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of removing the difference of depth between ion doped regions formed at an active region and an inactive region, respectively, by forming a well after depositing a nitride layer. CONSTITUTION: After sequentially forming a pad oxide layer and a pad nitride layer on a semiconductor substrate(21), a trench is formed by selectively etching the resultant structure. After carrying out an oxidation process for transforming the shape of the trench, a liner oxide layer(27) and an HDP(High Density Plasma) oxide layer(28) are sequentially formed on the entire surface of the resultant structure. Then, the pad nitride layer is exposed by polishing the resultant structure. The first ion implantation is carried out for forming a well. An HDP oxide nipple(29) is formed by removing the pad nitride layer and the pad oxide layer. Ions for controlling VT, are implanted into the resultant structure. After depositing a polysilicon layer(32) on the resultant structure, the nipple is exposed by polishing the polysilicon layer. Preferably, the pad nitride layer has a thickness of 2000-3500 angstrom.
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