METHOD FOR MANUFACTURING CONTACT HOLE FOR CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole for a contact plug of a semiconductor device is provided to be capable of preventing the bridge between bit lines due to the abnormal size increase of the bit line by conserving the line width of the upper portion of the contact hole using an insulating layer dulled to a precleaning process of the contact hole. CONSTITUTION: A capping insulating layer and a plurality of conductive lines(20) having a spacer, are formed at the upper portion of a semiconductor substrate(10). A gap fill insulating layer(40) is formed between the conductive layers. An HDP(High Density Plasma) interlayer dielectric(60a) is formed on the resultant structure. A plurality of contact holes(70) for a contact plug are formed at the resultant structure by selectively etching the interlayer dielectric or the gap fill insulating layer. Then, a precleaning process is carried out at the resultant structure.