| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to be capable of improving the characteristic and uniformity of the surface resistance of a silicide layer by increasing the upper surface of a gate electrode while conserving channel length. CONSTITUTION: After forming a trench in an insulating layer by selectively etching the insulating layer for exposing the predetermined portion of a semiconductor substrate(31), a gate oxide layer(38) is formed on the exposed portion of the semiconductor substrate. A trench type gate electrode(39) made of a polysilicon layer, is formed by filling conductive material into the trench. At this time, the upper portion of the gate electrode is larger than the lower portion. Then, a silicide layer(45) is formed on the upper portion of the trench type gate electrode.
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