METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING WET OXIDATION AND GROOVE

摘要

PURPOSE: A method for fabricating a semiconductor device using wet oxidation and a groove is provided to improve the performance of a transistor by controlling easily an effective channel length and improving a reverse short channel effect. CONSTITUTION: A mask pattern is formed on an active region of a semiconductor substrate(100). An oxide layer is formed by performing an oxidation process on the active region between mask patterns. A shallow trench is formed on the semiconductor substrate by removing the mask patterns and the oxide layer. A gate insulating layer(108) and a gate electrode(110) are formed on an upper portion of the shallow trench. The first spacer(112) is formed on a sidewall of the gate electrode. An LDD(Lightly Doped Drain) region(114) is formed near to the surface of the semiconductor substrate. The second spacer(116) is formed at a sidewall of the first spacer. A source/drain junction region(118) is formed within the semiconductor substrate.