METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to be capable of preventing the damage and bridge of contact hole by using a tungsten hard mask as an etch mask. CONSTITUTION: After forming an interlayer dielectric(21) on a semiconductor substrate(20), a tungsten film is formed on the interlayer dielectric(21). A tungsten hard mask(22A) is formed by selectively etching the tungsten film. A contact hole(25) is then formed to expose portions of the semiconductor substrate(20) by selectively etching the exposed interlayer dielectric(21).