| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form an inductor not affected by a semiconductor substrate by performing a process for forming a complementary metal oxide semiconductor(CMOS) and by forming the inductor not in contact with the semiconductor substrate. CONSTITUTION: An underlying structure(11) including a CMOS, a capacitor and an inductor pad(13) is prepared. The first photoresist layer pattern exposing the inductor pad is formed on the underlying structure. The second photoresist layer is coated on the resultant structure. An exposure and development process using a mask for the inductor is performed to form the second photoresist layer pattern while the inductor pad is exposed. The step between the second photoresist layer patterns is filled with a metal layer. The first and second photoresist layer patterns are removed to form the inductor of the metal layer that has a shape floating in the air.
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