| 摘要 |
PURPOSE: A ferroelectric capacitor and a method for manufacturing the same are provided to be capable of preventing short between a lower and upper electrode and the degradation of a ferroelectric film. CONSTITUTION: The first insulating layer(59) is formed on a semiconductor substrate(51). A lower electrode(62), a ferroelectric film(63) and a surface protection layer(64) are sequentially stacked on the first insulating layer(59). A liner(65) is formed at both sidewalls of the stacked structure and on the first insulating layer. The second insulating layer is formed on the liner(65) so as to fill between the stacked structure. After planarizing the second insulating layer, an upper electrode(68) is formed on the exposed stacked structure. At this time, the line-width of the upper electrode(68) is wider than that of the stacked structure.
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