METHOD FOR FABRICATING POLY SILICON TFT

摘要

PURPOSE: A method for fabricating a poly silicon TFT(Thin Film Transistor) is provided to reduce the generation of defects on the surface of a poly silicon layer by activating a catalytic metal material under the atmosphere of nitrogen. CONSTITUTION: A buffer layer(112) is formed on a substrate(100). An amorphous silicon layer is deposited on the entire surface of the buffer layer including the buffer layer. A catalytic metal material is absorbed on an upper portion of the amorphous silicon layer. A poly silicon layer(115) is forming by crystallizing the amorphous silicon layer. The poly silicon layer is stabilized by performing an activation process under the atmosphere of nitrogen. A surface of the stabilized poly silicon layer is etched by using a predetermined material such as HF.