METHOD FOR REMOVING DAMAGE OF WAFER SURFACE DUE TO HIGH DENSITY PLASMA DRY ETCHING

摘要

PURPOSE: A method for removing damage of wafer surface due to high density plasma dry etching is provided to be capable of preventing metallic impurities from diffusing into a wafer and simplifying processes by using a wet cleaning solutions without using high temperature thermal processing. CONSTITUTION: An oxide layer(2) and a nitride layer(3) are sequentially formed on a silicon wafer(1). A trench for isolation is then formed by selectively etching the exposed silicon wafer(1), wherein a surface damage layer(5) is formed on the trench due to dry etching. At this time, the surface damage layer(5) is removed by using wet cleaning solution without using high temperature thermal processing. Mixed solutions composed of BOE(Buffered Oxide Etchant) and H2O2 are used as the wet cleaning solution.