发明名称 SEMICONDUCTOR DEVICE USING SINGLE CARBON NANO TUBE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device using a single carbon nano tube and a method for manufacturing the same are provided to be capable of improving the degree of integration and operating speed by forming an N-type single carbon nano tube at the predetermined portion of a P-type single carbon nano tube using an implanting process after exposing the predetermined portion of the P-type single carbon nano tube. CONSTITUTION: An emitter(101a) made of a P-type carbon nano tube, a collector(101b) made of the P-type carbon nano tube, and a base(102) made of an N-type carbon nano tube are formed at the upper portion of a substrate. An emitter and collector electrode(202,203) are formed at the emitter and collector, respectively. A base electrode(201) is formed at the base.
申请公布号 KR20030056570(A) 申请公布日期 2003.07.04
申请号 KR20010086832 申请日期 2001.12.28
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 AHN, SEONG DEOK;CHO, GYEONG IK;CHOI, SEONG YUL;LEE, JIN HO;SONG, YUN HO;YOON, YONG SEON
分类号 H01L27/102;H01L31/0312;(IPC1-7):H01L27/102 主分类号 H01L27/102
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