发明名称 |
SEMICONDUCTOR DEVICE USING SINGLE CARBON NANO TUBE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device using a single carbon nano tube and a method for manufacturing the same are provided to be capable of improving the degree of integration and operating speed by forming an N-type single carbon nano tube at the predetermined portion of a P-type single carbon nano tube using an implanting process after exposing the predetermined portion of the P-type single carbon nano tube. CONSTITUTION: An emitter(101a) made of a P-type carbon nano tube, a collector(101b) made of the P-type carbon nano tube, and a base(102) made of an N-type carbon nano tube are formed at the upper portion of a substrate. An emitter and collector electrode(202,203) are formed at the emitter and collector, respectively. A base electrode(201) is formed at the base.
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申请公布号 |
KR20030056570(A) |
申请公布日期 |
2003.07.04 |
申请号 |
KR20010086832 |
申请日期 |
2001.12.28 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
AHN, SEONG DEOK;CHO, GYEONG IK;CHOI, SEONG YUL;LEE, JIN HO;SONG, YUN HO;YOON, YONG SEON |
分类号 |
H01L27/102;H01L31/0312;(IPC1-7):H01L27/102 |
主分类号 |
H01L27/102 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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