发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the problem that since word lines WL5-8 are disposed at places corresponding to word lines WL1-4 on the same pitch, an added capacity is applied between the word lines WL5-8 and between the word lines WL1-4, leading to the reduction in both rising and falling speeds of the potential of the word lines in a reading operation, which results in a consequent reduction in operating speed. <P>SOLUTION: The word lines WL5-8 are disposed at different places from those of the word lines WL1-4 with respect to a plane formed by the word lines WL1-4 to reduce an added capacity applied to each of the word lines WL1-4 and WL5-8. Consequently, both rising and falling speeds of the potential of an electrode can be increased. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003188355(A) 申请公布日期 2003.07.04
申请号 JP20010385177 申请日期 2001.12.18
申请人 SEIKO EPSON CORP 发明人 MARUYAMA AKIRA
分类号 G11C11/22;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 主分类号 G11C11/22
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