| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor substrate in which interlayer capacitance can be reduced and a stabilized contact is attained by enhancing the step coverage of a conductive film in a contact hole. <P>SOLUTION: The thin film transistor substrate comprises a semiconductor layer 14 provided with a source part 14a and a drain part 14b, an insulation film 16 and a gate electrode 20 formed on the semiconductor layer 14, interlayer insulation films 22 and 24 having different permittivity covering the gate electrode 20, a source part contact hole 25 and a drain part contact hole 25 formed in the interlayer insulation films 22 and 24, a pixel electrode 26 connected with the source part 14a through the source part contact hole 25, a first conductive film 26a formed of the same film as the pixel electrode 26 and connected with the drain part 14b through the drain part contact hole 25, and a second conductive film 28 connected with the drain part 14b through the first conductive film 26a. <P>COPYRIGHT: (C)2003,JPO</p> |
