| 摘要 |
PROBLEM TO BE SOLVED: To obtain an evaluation method of crystal defects for evaluating the crystal defects that are generated in a thin-film SOI layer and a thin-film surface layer through inline inspection. SOLUTION: In the evaluation region of an SOI layer 3, a silicide region 8 corresponding to a crystal defect generated in the SOI layer 3 is formed. In the silicide region 8, a metal element contained in a transition layer 10 is diffused into the SOI layer 3 through heat treatment, and is subjected to gettering by the crystal defects for silicide. Laser beams are irradiated inside the evaluation region through the transition layer 10 and a silicon oxide film 6. The evaluation region is scanned by laser beams, and at the same time, a current flowing between the first and second probes is detected by an ammeter, thus evaluating the crystal defects in the evaluation region. COPYRIGHT: (C)2003,JPO
|
