| 摘要 |
PURPOSE: An annealing method of a semiconductor device is provided to be capable of improving reliability and yield of devices by using H2 plasma. CONSTITUTION: An annealing process of a semiconductor device is performed by plasma using H2 gas or mixed gases of nitrogen and hydrogen. At this time, hydrogen atoms(H) in the plasma are accelerated into a semiconductor wafer(21) by applying DC voltage to the semiconductor wafer. The annealing process is performed at the temperature of 100-450°C. Also, the annealing process is selectively used during RTA(Rapid Thermal Annealing), STI(Shallow Trench Isolation) processing, or well annealing processing.
|
