METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to be capable of restraining bridge between plugs by forming a landing plug using a line-type mask. CONSTITUTION: A conductive layer for forming a plug is formed on a substrate having gate lines. The gate lines are isolated by planarizing the conductive layer. The conductive layer is then selectively etched by using a mask having line-type opening region crossed vertically with the gate lines, thereby forming a landing plug(32a). The first interlayer dielectric is formed on the resultant structure. After forming the second interlayer dielectric, a bit line contact region is then formed by selectively etching the second interlayer dielectric.