| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to be capable of reducing junction capacitance and leakage current in a shallow junction structure by carrying out an ion implantation using the step difference between an active region and an isolation layer. CONSTITUTION: After sequentially depositing a pad oxide layer(102) and a nitride layer(104a) on a semiconductor substrate(100), a trench is formed by selectively etching the resultant structure. After depositing an isolation layer(108a) on the resultant structure for completely filling the trench, a polishing process is carried out on the isolation layer. The nitride layer is partially removed. Then, an ion implantation is carried out for reducing the turn-on voltage of a field transistor. After removing the upper portion of the isolation layer, the remaining nitride layer and the pad oxide layer are sequentially removed.
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