SILICIDE LAYER OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A silicide layer of a semiconductor device and a fabricating method thereof are provided to prevent the generation of voids between the second spacer and a gate electrode in a clean process by over-etching the remaining nitride layer except for the nitride layer deposited on an upper portion. CONSTITUTION: A gate electrode(111) is formed on an upper portion of a semiconductor substrate(110). The first insulating layer is deposited on the entire surface of the semiconductor substrate. The first spacer(112) is formed at a sidewall of the gate electrode by over-etching the first insulating layer. The second insulating layer is deposited on the entire surface of the semiconductor substrate. The second spacer(113) and a cap layer(113') are formed on a sidewall and an upper surface of the first spacer by over-etching the second insulating layer. The surface of the semiconductor substrate and an upper portion of the gate electrode are cleaned. A source/drain region(115) is formed by implanting ions into the semiconductor substrate. A metal silicide layer(117) is formed on an upper portion of the source/drain region.