SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a highly efficient semiconductor laser having a sufficiently high optical output causing the generation of end-face destruction and reducing a threshold current in constituting disordering quantum wells and forming a window structure by injecting impurities into an active layer end face area and annealing the impurities. SOLUTION: The semiconductor laser is provided with a 1st conductive type semiconductor substrate 101, a 1st conductive type lower clad layer 103, a quantum well active layer 104, a 2nd conductive type 1st upper clad layer 105, a 1st conductive type current block layer 107 having a stripe groove area, and a 2nd conductive type 2nd upper clad layer 106 formed at least in the stripe groove area and a disordered area formed by induction of impurities is formed in the quantum well active layer 104 close to the end face of a laser resonator. A part having the largest impurity concentration is located so as to be separated from the end of the opposite side of the active layer 104 which is opposed to the substrate 101 to the 1st upper clad layer side and the impurity concentration contained in the active layer 104 is 2×1017cm-3to 1×1018cm-3. COPYRIGHT: (C)2003,JPO