发明名称 |
POWER AMPLIFIER MODULE AND SUBSTRATE FOR THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a power amplifier module that is excellent in heat dissipation property and can be prevented effectively from dropping in output or efficiency even when the on resistance of a semiconductor chip increases, and to provide a substrate used for the module. SOLUTION: The substrate 7 contains thermal via holes 5. The via holes 5 are provided in the thickness direction of the substrate 7 and contain heat sinks 6. The heat sinks 6 contain plated films 61. The films 61 are adhered to the internal surfaces of the via holes 5. The semiconductor chip 20 is mounted on the substrate 7 in the forming area of the thermal via holes 5 and thermally coupled with the heat sinks 6. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003188307(A) |
申请公布日期 |
2003.07.04 |
申请号 |
JP20010386807 |
申请日期 |
2001.12.19 |
申请人 |
TDK CORP |
发明人 |
TSUCHIYA SHINICHI;TAKAHARA MASASHI |
分类号 |
H01L23/12;(IPC1-7):H01L23/12 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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