| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high reliability semiconductor device, without lowering the gate oxide film withstand voltage and the semiconductor device. SOLUTION: After a trench isolation 3 is formed on a silicon substrate 1, oxidation is carried out in a mixed gas atmosphere of hydrogen and oxygen, and further, the oxide film thereof is removed through wet etching. COPYRIGHT: (C)2003,JPO
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