| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor epitaxial wafer of high quality which is curved small and has a polysilicon film with gettering capability at low cost with high productivity. SOLUTION: After protection films for dopant vaporization prevention are formed on the top and reverse surfaces of a semiconductor wafer and the protection film for dopant vaporization prevention formed on the top surface of the semiconductor wafer is removed, the semiconductor wafer is arranged in a reactor and epitaxial growth gas is introduced into the reactor to form an epitaxial film on the top surface of the semiconductor wafer arranged in the reactor and a polysilicon film on the reverse surface respectively at the same time, thereby actualizing a manufacturing method for the semiconductor epitaxial wafer. The epitaxial film is formed on the top surface of the semiconductor wafer, the protection film for dopant vaporization prevention is formed on the reverse surface of the semiconductor wafer, and the polysilicon film having the same conductivity as the epitaxial film is formed on the protection film for dopant vaporization prevention, thereby obtaining the semiconductor epitaxial wafer. COPYRIGHT: (C)2003,JPO
|
