| 摘要 |
A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110 at which an upper electrode 112 is provided and a container unit 120 having a lower electrode 122 provided to face opposite the upper electrode 112 , on which a substrate can be placed. An evacuation ring 126 is provided around the lower electrode 122 so as to divide the space in the processing chamber 100 into a plasma processing space 102 and an evacuation space 104 . At the evacuation ring 126 , through holes 126 a and blind holes 126 b which are fewer than the through holes 126 a and open toward the plasma processing space 102 are formed. An insulation coating constituted of Y<SUB>2</SUB>O<SUB>3 </SUB>is applied onto the surface of the evacuation ring 126 towards the plasma processing space 102. |
