| 摘要 |
PURPOSE: A method for manufacturing an MML(Merged Memory with Logic) device is provided to be capable of minimizing hot carrier effect by forming an oxynitride layer at sides of a gate oxide. CONSTITUTION: A gate insulating layer(105) composed of a gate oxide layer(103) and the first oxynitride layer(104) is formed on a semiconductor substrate(101). A gate electrode(106a) is formed on the gate insulating layer(105). The second oxynitride layer(108) is formed at both sidewalls of the gate insulating layer(105) by performing plasma oxynitridation processing. An insulating spacer is formed at both sidewalls of the gate electrode(106a). Then, a source/drain region is formed in the semiconductor substrate(101).
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