METHOD FOR FORMING PHOTORESIST PATTERN

摘要

PURPOSE: A method for forming a photoresist pattern is provided to be capable of preventing collapse of line and space photoresist pattern. CONSTITUTION: The first photoresist layer is coated on a semiconductor substrate(1) having conductive patterns(2a). The second photoresist pattern(4a) of a negative type is formed on the first photoresist layer. The surface of the second photoresist pattern(4a) is treated by silylation. A silicon oxide layer(5a) is formed by O2 plasma treatment of the second photoresist pattern(4a). The first photoresist pattern(3a) is then formed by O2 plasma etching of the first photoresist layer using the second photoresist pattern(4a) having the silicon oxide layer(5a) as a mask.