发明名称 TEMPERATURE DETECTION CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A temperature detection circuit of a semiconductor device is provided to easily control the temperature sensitivity by the rate of the resistor of the current mirror circuit and the resistor of the heat voltage generator. CONSTITUTION: A temperature detection circuit of a semiconductor device includes an enable block(110), a heat voltage generator(120), a current amplifier(130), a voltage comparator(140) and an output buffer(150). In the temperature detection circuit, the enable block(110) enable the temperature detection circuit, the heat voltage generator(120) generates the voltage inversely proportional to the temperature increase by using the core voltage applied from the enable block(110) and the current amplifier(130) generates the voltage proportional to the temperature increase by using the core voltage applied from the enable block(110). The voltage comparator(140) compares the voltage inversely proportional to the temperature increase with the voltage proportional to the temperature increase. And, the output buffer(150) outputs the high output voltage by intensifying the output signal from the voltage comparator(140).
申请公布号 KR20030055749(A) 申请公布日期 2003.07.04
申请号 KR20010085823 申请日期 2001.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, SEONG MIN
分类号 G11C7/04;(IPC1-7):G11C7/04 主分类号 G11C7/04
代理机构 代理人
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