发明名称 MEASURING METHOD FOR THICKNESS OF BPSG FILM AND CONCENTRATION OF DOPED FOREIGN MATERIAL
摘要 PURPOSE: A measuring method of thickness of a BPSG(Boron Phosphorous Silicate Glass) film and concentration of doped foreign materials is provided to measure thickness of the BPSG film and concentration of doped foreign materials on the BPSG film at the same time. CONSTITUTION: Boron and phosphorous are doped at regular concentration. Each reference BPSG film is formed in different thickness(S10). Light is irradiated on reference BPSG films and each spectrum is detected by reflected light of reference BPSG films(S12). Correlation between thickness of the reference BPSG film and the spectrum is derived(S14). Light is irradiated on each measured BPSG film doped with boron and phosphorous at optional concentration. Each spectrum is detected by reflected light of measured BPSG films(S16). Thickness of the measured BPSG film is derived by correlation between the reference BPSG film and the spectrum(S18). Concentration of foreign materials doped on the measured BPSG film is derived by spectrum(S20). Consequently, measuring time is reduced by measuring thickness of the BPSG film and concentration of doped foreign materials at the same time.
申请公布号 KR20030055841(A) 申请公布日期 2003.07.04
申请号 KR20010085952 申请日期 2001.12.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAK, JEONG HO
分类号 G01N21/31;(IPC1-7):G01N21/31 主分类号 G01N21/31
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