| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which thinning of a base layer and reduction in size are realized while preventing the collector-base parasitic capacitance from increasing. SOLUTION: An outer base 6 provided on a field insulation film 4 having an opening 18 enters the opening 18 to cover the sidewall of the field insulation film 4 thus forming a second opening. A base layer 10 is formed in the second opening with a recessed cross-section by etch back and connected to the outer base 6 on the sidewall of the second opening. Thickness of the field insulation film 4 can be set regardless of the thickness of the base layer 10 and the width of an intrinsic base, i.e., the width of the second opening, can be reduced. The base layer 10 is thereby made thin while reducing the parasitic capacitance and parasitic resistance incident to sealing-down resulting in a semiconductor device exhibiting excellent high speed response. COPYRIGHT: (C)2003,JPO
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