| 摘要 |
PURPOSE: A method for manufacturing a flat cell mask ROM(Read Only Memory) is provided to be capable of reducing cost by simplifying manufacturing processes, and improving the reliability and the degree of integration by simultaneously forming patterns for a buried N+ junction region and an isolation region. CONSTITUTION: After sequentially depositing the first oxide layer(220), a nitride layer(230), and an anti-reflective coating(240) made of the second oxide layer on a silicon substrate(210), a mask(255) is formed on the resultant structure for forming patterns for a trench and a buried N+ junction region. Then, the patterns for a trench and a buried N+ junction region are formed by carrying out an etching process at the resultant structure using the mask. Then, the buried N+ junction region and the trench are formed by using the patterns.
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