| 摘要 |
PURPOSE: A level shift circuit of a semiconductor memory device is provided to normally operate at a burn-in or a high voltage operation area by stably shifting the high supplying voltage VDD level gradually. CONSTITUTION: A level shift circuit of a semiconductor memory device includes a pair of unit level shifters(11,12) connected to each other in serial. In the level shift circuit, a supplying voltage(VDD) is applied to the drain of the unit level shifter(11), and a high voltage(VPP) is applied to the gate of the NMOS transistor(NM11), the source of the NMOS transistor(NM11) is connected to the input terminal(EVDD) of the supplying voltage. An internal voltage(VINT) is applied to the internal voltage input terminal(EVINT), the ground voltage(VSS) is applied to the ground voltage input terminal(EVSS) and the input voltage(VIN) is applied to the input terminal(EIN), whereby the first level shift operate to shift to the output voltage(VOUT1).
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