| 摘要 |
PURPOSE: An anti-fuse precharge circuit of a semiconductor device is provided to stably initialize the anti-fuse with the bit line precharge voltage by preventing the latch-up phenomenon during the initial power-on. CONSTITUTION: An anti-fuse precharge circuit of a semiconductor device includes an anti-fuse program determining block(110), an anti-fuse initializing block(120) for initializing the anti-fuse as a bit line precharge voltage during the initial power-on and a switching block(130). In the anti-fuse program determining block(110), a NAND gate(ND3) logically combines the inversion signal of the address signal(ADD) and the anti-fuse program signal(ANTRUP). And, the switching block(130) switches the current path between the anti-fuse program determining block(110) and the anti-fuse.
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