| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of improving the properties of moat and borderless contact and obtaining thermal stability of salicide. CONSTITUTION: A pad oxide layer is formed on a semiconductor substrate(11). A trench is formed in the substrate(11) by sequentially etching the pad oxide layer and the substrate. Sidewall oxidation processing is performed at the sidewalls of the trench. A nitride layer(17a) is filled into the trench. The surface of the resultant structure is planarized by polishing the nitride layer and the pad oxide layer.
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