| 摘要 |
PURPOSE: A vinyl ether derivative having a linear or cyclic alcohol, a photosensitive polymer using the derivative, a photoresist composition containing the polymer and a method for patterning the resist by using the composition are provided, which composition has an excellent resistance against dry etching and a high resolution and can be exposed with ArF (193 nm) and F2 (157 nm) excimer lasers. CONSTITUTION: The vinyl ether derivative is represented by the formula 1, wherein Z is an alkylene or oxyalkylene group of C2-C10; and R and R' are identical or different each other and are an alkyl group of C1-C10 or can form a cycle together selected from cyclopentyl, cyclohexyl, decahydronaphthyl, 2-norbornyl, 2-adamantyl or 8-tricyclodecanyl groups in the case of a cyclic alcohol. The photosensitive polymer contains the repeating units represented by the formula 2 and/or 3, wherein R1 is H or a methyl group; R2 is H or a hydrocarbon group of C1-C10; and m/(m+n) is 0.1-0.9. Optionally the polymer comprises further 10-50 wt% of maleic anhydride as a third comonomer. Preferably the polymer has a mass average molecular weight of 3,000-50,000. The photoresist composition comprises the photosensitive polymer; a photoacid generator; and a solvent. |
