| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of preventing leakage current by using a tantalum nitric oxide(TaON) layer as a dielectric film. CONSTITUTION: A lower electrode(17) is formed on a semiconductor substrate(11) having a polysilicon plug(15). A composite dielectric film(19) composed of SiON/Ta2O5 is formed on the lower electrode(17). A tantalum nitric oxide(TaON) layer(21) is formed by oxidation and nitridation of the Ta2O5 using laser and nitrogen gas. Then, an upper electrode(23) is formed on the tantalum nitric oxide layer(21).
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