| 摘要 |
PURPOSE: A method for removing the influence of divot in a semiconductor manufacturing process is provided to be capable of preventing the generation of dielectric breakdown and leakage current at a junction portion due to the divot. CONSTITUTION: An oxygen ion implantation is carried out at a divot generated region of a silicon substrate(11). An oxide layer(51) is formed by carrying out a heat treatment at the oxygen ion implanted region. Preferably, the oxygen ion implantation is capable of being carried out at any time from a mask process for forming an STI(Shallow Trench Isolation) to a planarization process. Preferably, the oxide layer forming process is carried out by using a heat treatment at the temperature of 1000-1200°C under nitrogen gas, oxygen gas, or mixed gases of the nitrogen gas and oxygen gas atmosphere.
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