METHOD FOR CLEANING VACUUM CHAMBER

摘要

PURPOSE: A method for cleaning a vacuum chamber is provided to prevent the disparity of threshold voltage characteristic of a thin film transistor by forming double layers of different materials on the wall of a vacuum chamber. CONSTITUTION: A method for cleaning a vacuum chamber comprises the steps of discharging the gas filled in a vacuum chamber by combining the foreign matters stuck on the wall of the vacuum chamber with plasma ions(S201), treating the vacuum chamber with hydrogen plasma(S203), forming a first layer of silicon material on the wall of the vacuum chamber through first seasoning(S204), and forming a second layer of amorphous material on the first layer through second seasoning(S205).