| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to be capable of improving the properties of devices by forming a salicide using RTP(Rapid Thermal Processing). CONSTITUTION: A gate electrode(24) and a source/drain(26) are formed on a substrate(21) having an isolation oxide layer(22). By depositing firstly a metal film and performing rapid thermal processing, the first salicide is formed on the gate electrode(24) and the source/drain(26). After removing non-reactive metal, the metal film is secondly deposited and treated by rapid thermal processing, thereby forming the second salicide. The deposition and RTP processes are repeatedly performed to form a desired salicide layer(30).
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