| 摘要 |
PURPOSE: A method for forming a metal gate electrode of a semiconductor device is provided to be capable of preventing the oxidation of the metal gate electrode by forming a nitride spacer at both sidewalls of the metal gate electrode. CONSTITUTION: A gate insulating layer(22) is selectively etched using a photoresist pattern as a mask. After removing the photoresist pattern, a metal gate electrode is exposed by etching a metal gate film(25) and a metal nitride layer(24). A nitride spacer(28) is formed at both sidewalls of the exposed metal gate electrode. A polysilicon layer(23) is formed on the metal gate electrode, thereby forming a stacked gate electrode. In order to compensate the damage of the gate insulating layer(22), the sides of the polysilicon layer(23) are oxidized by thermal oxidation.
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