| 摘要 |
PURPOSE: A method for forming an interconnection in an SRAM(Static Random Access Memory) is provided to improve integration degree by reducing minimum pitch between metal lines using a via line. CONSTITUTION: A polysilicon layer(32) is formed on a semiconductor substrate(31) having an isolation layer. The first interlayer dielectric having a contact region(33) is formed on the resultant structure. A metal line(34) is formed on the first interlayer dielectric to connect the contact region(33). After depositing the second interlayer dielectric on the resultant structure, a tungsten via line(35) is formed to partially connect the metal line(34).
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