| 摘要 |
PROBLEM TO BE SOLVED: To obtain high reliability by preventing the short circuit of a power source that is parallel with a series body even if an element temperature rises in the series body of an insulating gate type semiconductor element. SOLUTION: A gate drive circuit comprises temperature detection means 50, 15 that detect an element temperature of the insulating gate type semiconductor element 1. The circuit also comprises the power source wherein a voltage is divided by a variable resistor 13 that varies a resistance according to the element temperature and by a fixed resistor 14 that shows a fixed value, or divided by a diode 15 that is the temperature detection means and by the fixed resistor 14, and wherein the negative bias of a voltage output is increased by the resistance variation of the variable resistor 13 or the diode 15 associated with a rise in temperature of the insulating gate type semiconductor element. COPYRIGHT: (C)2003,JPO
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