| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which is suppressed in transfer of dislocation from a substrate to another layer, small in size, and performs a wiring operation with ease. <P>SOLUTION: The device comprises a substrate 2 composed of single crystals of Si, a blocking layer made of single crystals of Al, a plurality of insulation layers 4 which are separated from one another by gaps 5 and are arranged like strips on the stopping layer 3, a growth layer 6 which is provided so as to cover the gaps 5 and the insulation layers 4 and is made of a III nitride compound, and a light-emitting layer 8 provided above the growth layer 6. Further, a mask layer is provided above the gaps 5 so as to cover the gaps 5 in the growth layer 6. <P>COPYRIGHT: (C)2003,JPO |
