| 摘要 |
PROBLEM TO BE SOLVED: To provide a passive part, an ESD part and a logic part with a monolithic integration as a high-frequency power transistor structure with high cost efficiency and reliability. SOLUTION: A high-frequency power FET device 22 forms a monolithic high-frequency integrated circuit structure 10 by integrating the passive parts 23, 24, 26, 28, 31, electric static discharge (ESD) devices 27, 127, 227, and/or a logic structure 29 together on a semiconductor body 13. The high-frequency power FET device 22 includes a source grounding structure. The logic structure 29 uses the high-frequency power FET structure of the source grounding structure as one of the devices of a CMOS constitution. COPYRIGHT: (C)2003,JPO
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