| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma chemical deposition apparatus that can form a high-quality nitride film by generating a plasma of high intensity, and to provide a nitride film-forming method utilizing the plasma chemical depositing apparatus. SOLUTION: The plasma chemical deposition apparatus is equipped with a process chamber comprising upper and lower chambers 40 and 42, a reaction gas discharge ring 44 for discharging a reaction gas, a susceptor 52 that has a heater at the inside and fixes a wafer 56 for rotating, a plasma correction ring 54, a vacuum pump 60, and a power supply. The wafer 5 is loaded onto the susceptor 52, a first reaction gas containing a nitrogen constituent is supplied for converting to a plasma state thus forming a base layer on the wafer. A second reaction gas containing a silicon constituent is supplied to the inside of the process chamber for forming a nitride film on the wafer. The supply of the first and second reaction gases is interrupted, power application is interrupted, and the wafer 56 is unloaded. COPYRIGHT: (C)2003,JPO
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