| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a sapphire junction structure for preventing contamination on silicon wafers in a semiconductor manufacturing device. SOLUTION: The method for manufacturing a sapphire junction structure is provided with a step for selecting several single-crystal components which repeatedly have a unit lattice having periodic atomic arrangement determining lattice planes, a step 112 for measuring the orientation of the lattice plane of the component, a step 114 for processing the components in accordance with at least one of the lattice planes and determining the contact surface, a step 140 for applying junction materials, a step 142 for assembling the components on the contact surface and a step 146 for heating the components according to a specified temperature profile until the junction material is mutually welded with the material. COPYRIGHT: (C)2003,JPO
|
