| 摘要 |
PURPOSE: A gate line test pattern of a semiconductor device is provided to be capable of obtaining the same profile as a gate line of a real cell region by forming a curved portion at the gate test pattern. CONSTITUTION: A gate line test pattern of a semiconductor device is provided with an active region(1) defined at a substrate by an isolation layer, a gate test pattern(2) having a curved portion, formed at the active region by using the same material as a gate line of a cell region and carrying out the same process as the gate line of the cell region for using when carrying out a test of the gate line of the cell region, and a plurality of contact holes(3) formed at both sides of the gate test pattern on the upper portion of the active region.
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