发明名称 SEMICONDUCTOR DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a device in which a circuit performing read-out of a ROM is separated from the other circuit to determine which circuit has caused defect, or defective read-out of a ROM caused by drop of power source voltage is prevented, when defect is caused in operation of a device. <P>SOLUTION: The device is controlled so that when voltage of a low level is applied to an input pad PD11 and the voltage reaches a power-on detection level after applying a power source as usual, a start pulse is inputted to a ROM read-out control circuit RRC through a pulse generating circuit PG11 and a NOR circuit NR11, and read-out of a ROM is performed. However, when voltage PRDIS of high level is inputted to the input pad PD11, a start pulse is not outputted from the NOR circuit NR11, read-out of a ROM is not started automatically after applying a power source. Thereby, automatic start of read- out of a ROM is stopped at the time of occurrence of defect, and it can be determined whether a defect part exists in a read-out part of the ROM or in the other part depending on whether defect is caused or not. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003187592(A) 申请公布日期 2003.07.04
申请号 JP20010386053 申请日期 2001.12.19
申请人 TOSHIBA CORP 发明人 KANDA KAZUE;IMAMIYA KENICHI;NAKAMURA HIROSHI;TAKEUCHI TAKESHI;IKEHASHI TAMIO
分类号 G11C16/06;G11C17/18;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C16/06
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