SELECTIVE CHEMICAL VAPOR PHASE GROWTH SYSTEM AND METHOD

摘要

PROBLEM TO BE SOLVED: To provide a chemical vapor growth system and a chemical vapor growth method that omit a post-treatment step such as expensive inverse-active masking, and accelerate the generation of a more uniform film. SOLUTION: In the chemical vapor growth system and method, chemical species that are selectively built up are formed by extending the residence time of a reaction gas in a reaction region. The chemical species that are selectively built up are more quickly built up on the side and bottom surface of a semiconductor wafer and/or a CVD substrate. COPYRIGHT: (C)2003,JPO